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SILICON CARBIDE N-CHANNEL POWER MOSFET
SML25SCM650N2B
650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VDS
Drain - Source Voltage
VGS
Gate - Source Voltage
ID
Continuous Drain Current (1) Tc = 25°C
IDM
Pulsed Drain Current (2)
PD
Total Power Dissipation at TJ = 25°C
Derate Above 25°C
TJ
Maximum Junction Temperature
Tstg
Storage Temperature Range
THERMAL PROPERTIES
Symbols Parameters
RθJC
Thermal Resistance, Junction To Case
Notes
(1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤10 us, δ ≤ 1% (3) Pulse Width ≤ 380us, δ ≤ 2% (4) Indicative by design, not a production test (5) Pulse Width ≤ 780us, δ ≤ 2%
SML25SCM650N2B Datasheet
