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SML25SCM650N2B - Silicon Carbide N-Channel Power MOSFET

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Part number SML25SCM650N2B
Manufacturer Seme LAB
File Size 311.59 KB
Description Silicon Carbide N-Channel Power MOSFET
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SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD Total Power Dissipation at TJ = 25°C Derate Above 25°C TJ Maximum Junction Temperature Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤10 us, δ ≤ 1% (3) Pulse Width ≤ 380us, δ ≤ 2% (4) Indicative by design, not a production test (5) Pulse Width ≤ 780us, δ ≤ 2% 650V -6 to +22V 25
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