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S29C51004B - 4M-Bit 5-Volt CMOS Flash Memory

Download the S29C51004B datasheet PDF. This datasheet also covers the S29C51004T variant, as both devices belong to the same 4m-bit 5-volt cmos flash memory family and are provided as variant models within a single manufacturer datasheet.

Description

The S29C51004T/S29C51004B is a high speed 524,288 x 8 bit CMOS flash memory.

Writing or erasing the device is done with a single 5 Volt power supply.

The device has separate chip enable CE, write enable WE, and output enable OE controls to eliminate bus contention.

Features

  • s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Write Cycle Time: 35µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100 µA (Max) Hardware Data Protection Low VCC Pro.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S29C51004T_SyncMOSpdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S29C51004B
Manufacturer SyncMOS
File Size 3.07 MB
Description 4M-Bit 5-Volt CMOS Flash Memory
Datasheet download datasheet S29C51004B Datasheet

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Other Datasheets by SyncMOS

Part Number Description
S29C51004T 4M-Bit 5-Volt CMOS Flash Memory
S29C51001B 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
S29C51001T 1 MEGABIT / 5 VOLT CMOS FLASH MEMORY
S29C51002B 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY
S29C51002T 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY

Full PDF Text Transcription

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SyncMOS Technologies Inc. S29C51004T/S29C51004B 4 MEGABIT (524,288 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s s s s s s 512Kx8-bit Organization Address Access Time: 70, 90, 120 ns Single 5V ± 10% Power Supply Sector Erase Mode Operation 16KB Boot Block (lockable) 1K bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35µs (Max) Minimum 10,000 Erase-Program Cycles Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100 µA (Max) Hardware Data Protection Low VCC Program Inhibit Below 3.
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