Datasheet4U Logo Datasheet4U.com

S29C51002B - 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY

Download the S29C51002B datasheet PDF (S29C51002T included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 2 megabit / 5 volt cmos flash memory.

Description

TheS29C51002T/S29C51002B is a high speed 262,144 x 8 bit CMOS flash memory.

Features

  • s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors.
  • Sector-Erase Cycle Time: 10ms (Max).
  • Byte-Write Cycle Time: 35ms (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation.
  • Active Read Current: 20mA (Typ).
  • Active Program Current: 30mA (Typ).
  • Standby Current: 100mA (Max) s Hardware Data Protection.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (S29C51002T-SyncMOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number S29C51002B
Manufacturer SyncMOS
File Size 339.51 KB
Description 2 MEGABIT / 5 VOLT CMOS FLASH MEMORY
Datasheet download datasheet S29C51002B Datasheet

📁 Similar Datasheet

  • S29CD-G - Simultaneous Read/ Write Flash Memory (SPANSION)
  • S29CD-J - (S29CD-J / S29CL-J) Burst Mode Flash Memory (SPANSION)
  • S29CD016G - 16 Megabit (512 K x 32-Bit) CMOS 2.5 Volt-only Burst Mode / Dual Boot / Simultaneous Read/Write Flash Memory (SPANSION)
  • S29CD016G - Simultaneous Read/ Write Flash Memory (SPANSION)
  • S29CD016J - (S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory (SPANSION)
  • S29CD032G - CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT / SIMULTANEOUS READ /WRITE FLASH MEMORY (SPANSION)
  • S29CD032G - Simultaneous Read/ Write Flash Memory (SPANSION)
  • S29CL-J - (S29CD-J / S29CL-J) Burst Mode Flash Memory (SPANSION)
  • S29CL016J - (S29CD016J / S29CL016J) Simultaneous Read/Write Flash Memory (SPANSION)
  • S29 - Schottky Rectifiers (Fairchild Semiconductor)
Other Datasheets by SyncMOS

Full PDF Text Transcription

Click to expand full text
SyncMOS Technologies Inc. S29C51002T/S29C51002B 2 MEGABIT (262,144 x 8 BIT) 5 VOLT CMOS FLASH MEMORY Features s 256Kx8-bit Organization s Address Access Time: 70, 90, 120, 150 ns s Single 5V ± 10% Power Supply s Sector Erase Mode Operation s 16KB Boot Block (lockable) s 512 bytes per Sector, 512 Sectors – Sector-Erase Cycle Time: 10ms (Max) – Byte-Write Cycle Time: 35ms (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation – Active Read Current: 20mA (Typ) – Active Program Current: 30mA (Typ) – Standby Current: 100mA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.
Published: |