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VP1506 - P-Channel Enhancement-Mode Vertical DMOS FETs

Download the VP1506 datasheet PDF. This datasheet also covers the VP1 variant, as both devices belong to the same p-channel enhancement-mode vertical dmos fets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive tempe.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VP1-506.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number VP1506
Manufacturer Supertex Inc
File Size 62.40 KB
Description P-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet download datasheet VP1506 Datasheet

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Other Datasheets by Supertex Inc

Part Number Description
VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs
VP1550 P-Channel Enhancement-Mode Vertical DMOS FETs
VP1106N1 P-Channel Enhancement-Mode Vertical DMOS Power FETs
VP1106N2 P-Channel Enhancement-Mode Vertical DMOS Power FETs
VP1106N5 P-Channel Enhancement-Mode Vertical DMOS Power FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com VP1506 VP1509 P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -60V -90V † MIL visual screening available. RDS(ON) (max) 8.0Ω 8.0Ω ID(ON) (min) -0.5A -0.5A Order Number / Package Die† VP1506NW VP1509NW Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.