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VN0106 - N-Channel Enhancement-Mode Vertical DMOS FET

This page provides the datasheet information for the VN0106, a member of the VN0 N-Channel Enhancement-Mode Vertical DMOS FET family.

Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

  • Free from secondary breakdown.
  • Low power drive requirement.
  • Ease of paralleling.
  • Low CISS and fast switching speeds.
  • Excellent thermal stability.
  • Integral source-drain diode.
  • High input impedance and high gain.

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Datasheet preview – VN0106

Datasheet Details

Part number VN0106
Manufacturer Supertex Inc
File Size 343.91 KB
Description N-Channel Enhancement-Mode Vertical DMOS FET
Datasheet download datasheet VN0106 Datasheet
Additional preview pages of the VN0106 datasheet.

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Full PDF Text Transcription

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VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► Excellent thermal stability ► Integral source-drain diode ► High input impedance and high gain Applications ► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
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