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VN0106 - N-Channel Vertical DMOS FET

Datasheet Summary

Description

The VN0106 Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process.

Features

  • Free from Secondary Breakdown.
  • Low Power Drive Requirement.
  • Ease of Paralleling.
  • Low CISS and Fast Switching Speeds.
  • Excellent Thermal Stability.
  • Integral Source-Drain Diode.
  • High Input Impedance and High Gain.

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Datasheet preview – VN0106

Datasheet Details

Part number VN0106
Manufacturer Microchip
File Size 752.53 KB
Description N-Channel Vertical DMOS FET
Datasheet download datasheet VN0106 Datasheet
Additional preview pages of the VN0106 datasheet.

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Full PDF Text Transcription

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VN0106 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Thermal Stability • Integral Source-Drain Diode • High Input Impedance and High Gain Applications • Motor Controls • Converters • Amplifiers • Switches • Power Supply Circuits • Drivers (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) General Description The VN0106 Enhancement-mode (normally-off) transistors use a vertical DMOS structure and a well-proven silicon-gate manufacturing process.
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