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STN4828
Dual N Channel Enhancement Mode MOSFET
10.0A
DESCRIPTION
The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching .
PIN CONFIGURATION SOP-8
FEATURE
60V/10.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V
60V/6.0A, RDS(ON) = 35mΩ @VGS = 4.