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STN4828 - 10A Dual N-Channel Enhancement Mode MOSFET

Description

The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4828
Manufacturer Stanson Technology
File Size 500.98 KB
Description 10A Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN4828 Datasheet

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STN4828 Dual N Channel Enhancement Mode MOSFET 10.0A DESCRIPTION The STN4828 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . PIN CONFIGURATION SOP-8 FEATURE 60V/10.0A, RDS(ON) = 30mΩ (Typ.) @VGS = 10V 60V/6.0A, RDS(ON) = 35mΩ @VGS = 4.
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