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STN4850 - N-Channel Enhancement Mode MOSFET

Description

STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number STN4850
Manufacturer STANSON
File Size 522.69 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet STN4850 Datasheet

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STN4850 N Channel Enhancement Mode MOSFET 7.2A DESCRIPTION STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION SOP-8 FEATURE � 60V/7.2A, RDS(ON) = 27mΩ (Typ.) @VGS = 10V � 60V/6.8A, RDS(ON) = 32mΩ @VGS = 4.
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