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ST9435GP - MOSFET

Description

ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST9435GP
Manufacturer Stanson Technology
File Size 358.09 KB
Description MOSFET
Datasheet download datasheet ST9435GP Datasheet

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ST9435GP P Channel Enhancement Mode MOSFET -15.0A DESCRIPTION ST9435GP is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These device is particularly suited for low voltage application, notebook computer power management and other battery circuits where high-side switching. PIN CONFIGURATION FEATURE -30V/-10A, RDS(ON) = 50mΩ @VGS = -10V -30V/-5A, RDS(ON) = 80mΩ @VGS = -4.
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