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ST9402 - N-Channel MOSFET

Description

ST9402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as ce

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Datasheet Details

Part number ST9402
Manufacturer Stanson Technology
File Size 217.88 KB
Description N-Channel MOSFET
Datasheet download datasheet ST9402 Datasheet

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N Channel Enhancement Mode MOSFET ST9402 3.6A DESCRIPTION ST9402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package. PIN CONFIGURATION SOT-23 FEATURE z z z S 2 2.Source 3.Drain z z 20V/3.6A, RDS(ON) = 76mΩ @VGS = 4.5V 20V/3.1A, RDS(ON) = 90 mΩ @VGS = 2.
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