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ST3406SRG
N Channel Enhancement Mode MOSFET
5.4A
DESCRIPTION
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D G 1
S 2
FEATURE
30V/5.4A, RDS(ON) = 26mΩ(Typ.) @VGS = 10V
30V/4.6A, RDS(ON) = 38mΩ @VGS = 4.
ST3406SRG Datasheet
