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ST3403 - P Channel Enchancement Mode MOSFET

General Description

The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

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Datasheet Details

Part number ST3403
Manufacturer Stanson Technology
File Size 174.57 KB
Description P Channel Enchancement Mode MOSFET
Datasheet download datasheet ST3403 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com P Channel Enchancement Mode MOSFET -3.5A DESCRIPTION ST3403 The ST3403 is the P-Channel logic enhancement mode power field effect transistor are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outine surface mount package. PIN CONFIGURATION SOT-23-3L 3 FEATURE -30V/-2.8A, RDS(ON) = 105m-ohm @VGS = -10V -30V/-2.5A, RDS(ON) = 115m-ohm @VGS = -4.5V -30V/-1.5A, RDS(ON) = 155m-ohm @VGS = -2.5V RDS(ON) =255m-ohm @VGS = -1.