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SSW108 - DC-4 GHz High Isolation GaAs MMIC SPDT Switch

Download the SSW108 datasheet PDF. This datasheet also covers the SSW-108 variant, as both devices belong to the same dc-4 ghz high isolation gaas mmic spdt switch family and are provided as variant models within a single manufacturer datasheet.

Description

Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package.

This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias.

Features

  • High Isolation: 32dB at 2GHz.
  • Low DC Power Consumption.
  • Non-reflective.
  • Broadband Performance - True DC Operation.
  • Low Cost Small Outline Plastic Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSW-108_StanfordMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSW108
Manufacturer Stanford Microdevices
File Size 83.13 KB
Description DC-4 GHz High Isolation GaAs MMIC SPDT Switch
Datasheet download datasheet SSW108 Datasheet

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Other Datasheets by Stanford Microdevices

Part Number Description
SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch
SSW-124 DC-6 GHz High Isolation SPDT GaAs MMIC Switch
SSW-208 DC-4 GHz High Isolation GaAs MMIC SPDT Switch
SSW-224 DC-6 GHZ HIGH ISOLATION SPDT GAAS MMIC SWITCH
SSW-308 DC-3 GHz Low Cost GaAs MMIC SPDT Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Description Stanford Microdevices’ SSW-108 is a high performance Gallium Arsenide Field Effect Transistor MMIC switch housed in a low-cost surface-mountable small outline plastic package. This single-pole, double-throw, non-reflective switch consumes less than 50uA and operates at -5V and 0V for control bias. Its high isolation and low insertion loss makes it ideal for T/R switching in analog and digital wireless communication systems. The die is fabricated using 0.5 micron FET process with gold metallization and silicon nitride passivation to achieve excellent performance and reliability. SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Isolation vs.
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