Datasheet4U Logo Datasheet4U.com

SSW1N60A - Advanced Power MOSFET

Features

  • Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max. ) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ. ) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) Continuous Drain Current (TC=100 C ) Dr.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SSW108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Stanford Microdevices
SSW-104-01-T-S Socket Strip Samtec
SSW-108 DC-4 GHz High Isolation GaAs MMIC SPDT Switch Stanford Microdevices
SSW-124 DC-6 GHz High Isolation SPDT GaAs MMIC Switch Stanford Microdevices
SSW-1xx-xx-F-x Socket Strip Samtec

Other Datasheets by Fairchild (onsemi)

Part Number Description
SSW1N60B 600V N-Channel MOSFET
SSW1N50B 520V N-Channel MOSFET
SSW10N60B 600V N-Channel MOSFET
SSW2N60B 600V N-Channel MOSFET
SSW2N80A Advanced Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 600V Low RDS(ON) : 9.390 Ω (Typ.) SSW/I1N60A BVDSS = 600 V RDS(on) = 12 Ω ID = 1 A D2-PAK 2 I2-PAK 1 1 3 2 3 1. Gate 2. Drain 3.
Published: |