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SXA-389BZ - Medium Power GaAs HBT Amplifier

Download the SXA-389BZ datasheet PDF. This datasheet also covers the SXA-389B variant, as both devices belong to the same medium power gaas hbt amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package.

Features

  • Now Available in Leed Free, RoHS Compliant, & Green Packaging.
  • Lower Rth for increased MTTF 108 hrs. at TLead = 85°C.
  • On-chip Active Bias Control, Single 5V Supply.
  • Excellent Linearity: +43 dBm typ. OIP3 at 1960 MHz.
  • High P1dB : +25 dBm typ.
  • High Gain: +18.5 dB at 850 MHz.
  • Efficient: consumes only 575 mW Typical OIP3, P1dB, Gain 50 45 40 35 30 25 20 15 10 5 0 850 MHz 1960 MHz 2140 MHz OIP3 P1dB Gain dBm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SXA-389B_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SXA-389BZ
Manufacturer Sirenza Microdevices
File Size 171.68 KB
Description Medium Power GaAs HBT Amplifier
Datasheet download datasheet SXA-389BZ Datasheet

📁 Similar Datasheet

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SXA-389Z MEDIUM POWER GaAs HBT AMPLIFIER RF Micro Devices
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SXA15 High Efficiency DC/DC Converters Artesyn Technologies
SXA389BZ MEDIUM POWER GaAs HBT AMPLIFIER RF Micro Devices

Other Datasheets by Sirenza Microdevices

Part Number Description
SXA-389B Medium Power GaAs HBT Amplifier
SXA-389 Medium Power GaAs HBT Amplifier
SXA-389Z Medium Power GaAs HBT Amplifier
SXA-3318B Medium Power GaAs HBT Amplifier
SXA-3318BZ Medium Power GaAs HBT Amplifier

Full PDF Text Transcription

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Product Description Sirenza Microdevices’ SXA-389B amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surfacemountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400-2500 MHz cellular, ISM, WLL, PCS, WCDMA applications. Its high linearity makes it an ideal choice for multi-carrier as well as digital applications.
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