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SXA-389Z - MEDIUM POWER GaAs HBT AMPLIFIER

Download the SXA-389Z datasheet PDF. This datasheet also covers the SXA-389 variant, as both devices belong to the same medium power gaas hbt amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

Features

  • Available in RFMD Green, RoHS Compliant, and Pb-Free (Z Part Number).
  • On-Chip Active Bias Control, Single 5V Supply.
  • High Output 3rd Order Intercept:+42to+44dBm Typ.
  • High P1dB :+25dBm Typ.
  • High Gain:+19dB at 850MHz.
  • High Efficiency: Consumes Only 600 mW.
  • Patented High Reliability GaAs HBT Technology.
  • Surface-Mountable Power Plastic Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SXA-389-RFMicroDevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SXA-389Z
Manufacturer RF Micro Devices
File Size 333.58 KB
Description MEDIUM POWER GaAs HBT AMPLIFIER
Datasheet download datasheet SXA-389Z Datasheet

📁 Similar Datasheet

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SXA-389Z Medium Power GaAs HBT Amplifier Sirenza Microdevices
SXA-389 Medium Power GaAs HBT Amplifier Sirenza Microdevices
SXA-389B Medium Power GaAs HBT Amplifier Sirenza Microdevices
SXA-389BZ Medium Power GaAs HBT Amplifier Sirenza Microdevices
SXA-3318B Medium Power GaAs HBT Amplifier Sirenza Microdevices

Other Datasheets by RF Micro Devices

Part Number Description
SXA-389 MEDIUM POWER GaAs HBT AMPLIFIER
SXA389BZ MEDIUM POWER GaAs HBT AMPLIFIER

Full PDF Text Transcription

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SXA-389(Z) 400MHz to 2500 MHz ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-389(Z) 400MHz to 2500MHz ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD’s SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. These amplifiers are specially designed for use as driver devices for infrastructure equipment in the 400MHz to2500MHz cellular, ISM, WLL, PCS, W-CDMA applications.
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