Datasheet4U Logo Datasheet4U.com

SGA-3586 - Cascadable SiGe HBT MMIC Amplifier

Download the SGA-3586 datasheet PDF. This datasheet also covers the SGA-3586Z variant, as both devices belong to the same cascadable sige hbt mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The SGA-3586 is a high performance SiGe HBT MMIC Amplifier.

A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance.

The heterojunction increases breakdown voltage and minimizes leakage current between junctions.

Features

  • Available in Lead Free, RoHS Compliant green package ( Z Suffix ).
  • 50 Ohm Cascadable Gain Block.
  • High Gain: 25 dB typ. at 850 MHz.
  • High Output IP3: 25 dBm typ. at 1950 MHz.
  • Low Noise Figure: 2.5 dB typ. at 1950 MHz.
  • Low Current Draw: 35mA typ.
  • Single Voltage Supply Operation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGA-3586Z_SirenzaMicrodevices.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGA-3586
Manufacturer Sirenza Microdevices
File Size 304.47 KB
Description Cascadable SiGe HBT MMIC Amplifier
Datasheet download datasheet SGA-3586 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SGA-3486 CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD
SGA-3486Z CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD
SGA-1263 DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK RFMD
SGA-1263Z DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK RFMD
SGA-2286 CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD

Other Datasheets by Sirenza Microdevices

Part Number Description
SGA-3586Z Cascadable SiGe HBT MMIC Amplifier
SGA-3563 Cascadable SiGe HBT MMIC Amplifier
SGA-3563Z Cascadable SiGe HBT MMIC Amplifier
SGA-3263 Cascadable SiGe HBT MMIC Amplifier
SGA-3263Z Cascadable SiGe HBT MMIC Amplifier

Full PDF Text Transcription

Click to expand full text
Product Description The SGA-3586 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in high suppression of intermodulation products. Operation requires only a single positive voltage supply, 2 DC-blocking capacitors, a bias resistor and an RF choke.
Published: |