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SGA-1263 - DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

General Description

RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz.

Key Features

  • DCto400MHz Operation.
  • Single Supply Voltage.
  • Excellent Isolation, >50dB at 900 MHz.
  • 50W In/Out, Broadband Match for Operation from DC4 GHz.
  • Unconditionally Stable.

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📁 Similar Datasheet

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Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
SGA-1263Z DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
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SGA0363Z SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGA1263Z DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA2163Z CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2186Z CASCADABLE SiGe HBT MMIC AMPLIFIER
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGA-1263(Z) DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA-1263(Z) DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA-1263(Z) is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V.