SGA1263Z - DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK

RF Micro Devices (now Qorvo)

General Description

RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz.

Key Features

DCto4000MHz Operation.
Single Supply Voltage.
Excellent Isolation, >50dB at 900 MHz.
50 In/Out, Broadband Match for Operation from DC4 GHz.
Unconditionally Stable.

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SGA1263Z dcto4000mhz silicon germanium hbt cascadable gain block by RF Micro Devices (now Qorvo) - Datasheet Preview

Datasheet Details

Part number	SGA1263Z
Manufacturer	RF Micro Devices (now Qorvo)
File Size	379.80 KB
Description	DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
Datasheet	SGA1263Z Datasheet

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number	Description
SGA-1263	DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA-1263Z	DC to 4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
SGA-2286	CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-2286Z	CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-3486	CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA-3486Z	CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA0363Z	SILICON GERMANIUM CASCADABLE GAIN BLOCK
SGA2163Z	CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2186Z	CASCADABLE SiGe HBT MMIC AMPLIFIER
SGA2263Z	CASCADABLE SiGe HBT MMIC AMPLIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGA1263Z DC to 4000 MH z Silicon Germanium HBT Cascadable Gain Block SGA1263Z DCto4000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-363 Product Description RFMD’s SGA1263Z is a Silicon Germanium HBT Heterostructure Bipolar Transistor (SiGe HBT) amplifier that offers excellent isolation and flat gain response for application to 4GHz. This RFIC is a 2-stage design that provides high isolation of up to 40dB at 2GHz and is fabricated using the latest SiGe HBT 50GHz FT process, featuring one-micron emitters with VCEO>7V. These unconditionally stable amplifiers have less than 1dB gain drift over 125°C operating range (-40°C to +85°C) and are ideal for use as buffer amplifiers in oscillator applications covering Optimum Technology cellular, ISM, and narrowband PCS bands.