SII75S12 - SPT IGBT

Sirectifier Semiconductors

Datasheet Details

Part number	SII75S12
Manufacturer	Sirectifier Semiconductors
File Size	638.18 KB
Description	SPT IGBT
Datasheet	SII75S12 Datasheet

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SII75S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 100(70) 200(140) _ +20 _ 40...+150(125) 4000 75(50) 200(140) 550 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SII75S12 SPT IGBT Modules Characteristics Symbol Conditions IGBT VGE(th) VGE = VCE, IC = 4mA ICES VGE = 0; VCE = VCES; Tj = 25(125)oC VCE(TO) Tj = 25(125)oC rCE VGE = 20V, Tj = 25(125)oC VCE(sat) IC = 50A; VGE = 15V; chip level Cies under following conditions C oes VGE = 0, VCE = 25V, f = 1MHz www.DataSheet4U.