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SII100N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
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Absolute Maximum Ratings Symbol VCES IC ICRM VGES
Ptot TVj,(Tstg) Visol RthJC RthJCD
o
TC = 25oC, unless otherwise specified Conditions
Values 1200 145(100) 290(200) _ +20 700 _ 40...+125(150) 2500 _ < 0.18
o
Units V A A V
W C
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION < AC, 1min
V
K/W
_ 0.36 <
Sirectifier
R
SII100N12
NPT IGBT Modules
Electeical Characteristics
Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =4mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =100A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.DataSheet4U.
SII100N12 Datasheet
