The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SII50N12
NPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
www.DataSheet4U.com
Absolute Maximum Ratings Symbol VCES IC ICRM VGES
Ptot TVj,(Tstg) Visol RthJC RthJCD
o
TC = 25oC, unless otherwise specified Conditions
Values 1200 78(50) 156(100) _ +20 400 _ 40...+125(150) 2500 _ < 0.3
o
Units V A A V
W C
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION < AC, 1min
V
K/W
_ 0.6 <
Sirectifier
R
SII50N12
NPT IGBT Modules
Electeical Characteristics
Symbol Conditions Static Characteristics VGE(th) VGE = VCE, IC =2mA ICES VGE = 0; VCE = 1200V; Tj = 25(125)oC IGES VGE = 20V, VCE = 0 VCE(sat) IC =50A; VGE = 15V; Tj = 25(125)oC; chip level AC Characteristics Cies under following conditions Coes VGE = 0, VCE = 25V, f = 1MHz Cres www.DataSheet4U.
SII50N12 Datasheet
