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SII400S12
SPT IGBT Modules
Dimensions in mm (1mm = 0.0394")
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Absolute Maximum Ratings
Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values
1200
Units V A A
o
TC= 25(80) C TC= 25(80)oC, tP =1ms
_ Tstg TOPERATION < AC, 1min
o
565(400) 1130(800) _ +20 _ 40...+150(125) 4000 390(260) 1130(800) 2900
V C V
Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC
A A A
SII400S12
SPT IGBT Modules
Characteristics
Symbol Conditions IGBT VGE(th) VGE = VCE, IC = 12mA ICES VGE = 0; VCE = VCES; Tj = 25oC VCE(TO) Tj = 25(125)oC rCE VGE = 15V, Tj = 25(125)oC VCE(sat) IC =300A; VGE = 15V; chip level Cies under following conditions C oes VGE = 0, VCE = 25V, f = 1MHz www.DataSheet4U.
SII400S12 Datasheet
