SII200S12 - SPT IGBT Modules

Sirectifier Semiconductors

Datasheet Details

Part number	SII200S12
Manufacturer	Sirectifier Semiconductors
File Size	488.56 KB
Description	SPT IGBT Modules
Datasheet	SII200S12 Datasheet

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SII200S12 SPT IGBT Modules Dimensions in mm (1mm = 0.0394") www.DataSheet4U.com Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A o TC= 25(80) C TC= 25(80)oC, tP =1ms _ Tstg TOPERATION < AC, 1min o 310(220) 620(440) _ +20 _ 40...+150(125) 4000 190(130) 620(440) 1450 V C V Visol Inverse Diode IF=-IC TC= 25(80)oC TC= 25(80)oC, tP =1ms IFRM IFSM tP =10ms; sin.;Tj=150 oC A A A SII200S12 SPT IGBT Modules Characteristics Symbol Conditions IGBT VGE(th) VGE = VCE, IC = 6mA ICES VGE = 0; VCE = VCES; Tj = 25(125)oC VCE(TO) Tj = 25(125)oC rCE VGE = 15V, Tj = 25(125)oC VCE(sat) IC =150A; VGE = 15V; chip level Cies under following conditions C oes VGE = 0, VCE = 25V, f = 1MHz www.DataSheet4U.