SBG1040 - Low VF Schottky Barrier Rectifiers

Sirectifier Semiconductors

Key Features

Metal of silicon rectifier, majority carrier conducton.
Guard ring for transient protection.
Low power loss, high efficiency.
High current capability, low VF.
High surge capacity.
For use in low voltage, high frequency inverters, free whelling, and polarity protection.

SBG1040 low vf schottky barrier rectifiers by Sirectifier Semiconductors - Datasheet Preview

Datasheet Details

Part number	SBG1040
Manufacturer	Sirectifier Semiconductors
File Size	95.71 KB
Description	Low VF Schottky Barrier Rectifiers
Datasheet	SBG1040 Datasheet

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Other Datasheets by Sirectifier Semiconductors

Part Number	Description
SBG1045	Low VF Schottky Barrier Rectifiers
SBG1030	Low VF Schottky Barrier Rectifiers
SBG1035	Low VF Schottky Barrier Rectifiers

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBG1030 thru SBG1045 www.DataSheet4U.com Low VF Schottky Barrier Rectifiers Dimensions TO-263(D2PAK) A A C A=Anode, C=Cathode, TAB=Cathode VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 C Dim. A A1 b b2 c c2 D D1 E E1 e L L1 L2 L3 L4 R Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 C(TAB) 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 SBG1030 SBG1035 SBG1040 SBG1045 1. 2. 3. 4.