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HUR830S - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet Details

Part number HUR830S
Manufacturer Sirectifier Semiconductors
File Size 269.21 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet download datasheet HUR830S Datasheet

Full PDF Text Transcription

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HUR830S High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode C(TAB) A A NC www.DataSheet4U.com A=Anode, Dimensions TO-263(D2PAK) C Dim. A A1 b b2 c c2 D D1 Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .315 .190 .110 .039 .055 .029 .055 .380 .350 NC= No connection, TAB=Cathode E E1 e L L1 L2 L3 L4 R 9.65 10.29 6.22 8.13 2.54 BSC 14.61 2.29 1.02 1.27 0 0.46 15.88 2.79 1.40 1.78 0.20 0.74 .380 .405 .245 .320 .100 BSC .575 .090 .040 .050 0 .018 .625 .110 .055 .070 .008 .029 HUR830S VRSM V 300 VRRM V 300 1. 2. 3. 4.
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