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HUR820 - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

Features

  • International standard package.
  • Planar passivated chips.
  • Very short recovery time.
  • Extremely low switching losses.
  • Low IRM-values.
  • Soft recovery behaviour.

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Datasheet Details

Part number HUR820
Manufacturer Sirectifier Semiconductors
File Size 191.01 KB
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
Datasheet download datasheet HUR820 Datasheet

Full PDF Text Transcription

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HUR820 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q www.DataSheet4U.com A=Anode, C=Cathode, TAB=Cathode HUR820 VRSM V 200 VRRM V 200 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight TC=25oC mounting torque typical Test Conditions TC=150oC; rectangular, d=0.5 TVJ=45oC; tp=10ms (50Hz), sine TVJ=25 C; non-repetitive; IAS=2A; L=180uH VA=1.5.
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