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SED4060G - N-Channel MOSFET

Download the SED4060G datasheet PDF. This datasheet also covers the SED4060G-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • For a single MOSFET.
  • VDS = 40V.
  • RDS(ON) = 7mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5.
  • 6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 40 ±20 60 200 65 -55 to 175 Units V V A W ℃ Typ Max Units.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SED4060G-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SED4060G
Manufacturer Sino-IC
File Size 556.44 KB
Description N-Channel MOSFET
Datasheet download datasheet SED4060G Datasheet

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Full PDF Text Transcription

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SED4060G N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 40V  RDS(ON) = 7mΩ @ VGS=10V Pin configurations See Diagram below DD 56 DD 78 1 2 34 S S S G DFN5*6 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Operating Junction Temperature Range Symbol VDS VGS ID PD TJ Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Rating 40 ±20 60 200 65 -55 to 175 Units V V A W ℃ Typ Max Units - 5 ℃/W ShangHai Sino-IC Microelectronic Co., Ltd. 1.
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