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SED3030M - N-Channel MOSFET

Download the SED3030M datasheet PDF. This datasheet also covers the SED3030M-Sino variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

  • For a single MOSFET.
  • VDS = 30V.
  • RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SED3030M-Sino-IC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SED3030M
Manufacturer Sino-IC
File Size 494.34 KB
Description N-Channel MOSFET
Datasheet download datasheet SED3030M Datasheet

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Full PDF Text Transcription

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SED3030M N-Channel Enhancement-Mode MOSFET Revision: A General Description This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of application Features For a single MOSFET  VDS = 30V  RDS(ON) = 7.4mΩ@VGS=10V Pin configurations See Diagram below Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Single pulse avalanche energy Operating Junction Temperature Range Thermal Resistance Symbol Parameter RθJC Thermal Resistance Junction to Case Symbol VDS VGS ID PD EAS TJ Rating 30 ±20 30 80 40 72 -55 to 175 Units V V A W mJ ℃ Typ Max Units - 3 ℃/W ShangHai Sino-IC Microelectronics Co., Ltd. 1.
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