Click to expand full text
Main Product Characteristics:
VDSS
40V
RDS(on) 2.87mohm(typ.)
ID 120A ①
TO220
Features and Benefits:
Advanced trench MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature
SSFT4004
Marking and pin Schematic diagram Assignment
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.