SSFT3906 - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

TO220 .
Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Silikron Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	SSFT3906
Manufacturer	SilikrON Semiconductor
File Size	410.74 KB
Description	MOSFET
Datasheet	SSFT3906 Datasheet
Additional preview pages of the SSFT3906 datasheet.

📁 Similar Datasheet

SSFT3906 - N-Channel MOSFET (GOOD-ARK)
SSFT3904 - N-Channel MOSFET (GOOD-ARK)
SSFT3904J7-HF - MOSFET (Silikron)
SSFT3904U - N-Channel MOSFET (GOOD-ARK)
SSFT3102 - MOSFET (Silikron)
SSFT4003 - N-Channel MOSFET (GOOD-ARK)
SSFT4003A - N-Channel MOSFET (GOOD-ARK)
SSFT4004 - N-Channel MOSFET (GOOD-ARK)
SSF-LXH100GD - LED (Lumex)
SSF-LXH100GD-01 - LED (Lumex)

Other Datasheets by Silikron Semiconductor

SSFT3904 - MOSFET
SSFT3904U - MOSFET
SSFT4002 - MOSFET
SSFT4003 - MOSFET
SSFT4003A - MOSFET
SSFT4004 - MOSFET
SSF1090 - N-Channel enhancement mode trench power MOSFET
SSF10N90F1 - MOSFET

Full PDF Text Transcription

Click to expand full text

Main Product Characteristics: VDSS 30V RDS(on) 3.2mohm(typ.) ID 90A Features and Benefits: TO220 Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature SSFT3906 SSFT3906 Marking and pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Published: Jul 8, 2016 |