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SSF2715 - Extremely high dv/dt capability

General Description

SSF2715 is a new generation of high voltage N Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switch

Key Features

  • Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 500V ID = 5A RDS(ON) = 1.2Ω.

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Datasheet Details

Part number SSF2715
Manufacturer Silikron Semiconductor Co
File Size 470.74 KB
Description Extremely high dv/dt capability
Datasheet download datasheet SSF2715 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com SSF2715 Features ■ ■ Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 500V ID = 5A RDS(ON) = 1.2Ω ■ ■ ■ ■ Description SSF2715 is a new generation of high voltage N–Channel enhancement mode power MOSFETs and is obtained through an extreme optimization layout design, in additional to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability, provide superior switching performance, withstand high energy pulse in the avalanche, and increases packing density.