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VQ1006 SERIES
N-Channel Enhancement-Mode MOS Transistor Arrays
PRODUCT SUMMARY
PART V(BR)OSS rOS(ON) 10
NUMBER (V)
(11)
(A)
PACKAGE
VQ1006J
90
4.5
0.40
Plastic
VQ1006P
90
4.5
0.40 Side Braze
Performance Curves: VNDQ09 (See Section 7)
14-PIN DIP SIDE BRAZE
~ "." . .) ..... :. "" "
14-PIN PLASTIC
~Siliconix ~ incorporated
TOP VIEW
Oual-In-Line Package
= ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current. Pulsed Drain Current 1
TA= 25DC TA= 100DC
Power Dissipation - Single
TA= 25DC TA= 100DC
Power Dissipation - Quad
TA= 25DC TA=100DC
Operating Junction and Storage Temperature
Lead Temperature (1/16" from case for 10 seconds)
VGS ID IDM
PD
TJ.
VQ1006 Datasheet
