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VQ1001 - N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array

Features

  • o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thernial stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices.

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Datasheet Details

Part number VQ1001
Manufacturer Supertex
File Size 109.52 KB
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
Datasheet download datasheet VQ1001 Datasheet

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Part Number Description
VQ1000 N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array
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Full PDF Text Transcription

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o §upertexinc. VQ1001 Ordering Information BVoss J BVOGS 30V '14-pin side-brazed ceramic DIP. ROS(ON) (max) 1.00 N-Channel Enhancement-Mode Vertical DMOS Power FETs Quad Array IOION) (min) 2.0A Order Number JPackage Quad Ceramic DIP' VQ1001P Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thernial stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Applications o Motor control o Convertors o Amplifiers o Switches o Power supply circuits o Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.
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