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VN1710M - N-Channel Enhancement-Mode MOS Transistors

This page provides the datasheet information for the VN1710M, a member of the VN1710L N-Channel Enhancement-Mode MOS Transistors family.

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Datasheet Details

Part number VN1710M
Manufacturer Siliconix
File Size 94.07 KB
Description N-Channel Enhancement-Mode MOS Transistors
Datasheet download datasheet VN1710M Datasheet
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~Siliconix ~ incorporated PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (.0. ) (A) PACKAGE VN1710L 170 10 0.17 TO-92 VN171 OM 170 10 0.19 TO-237 Performance Curves: VNDB24 (See Section 7) VN1710 SERIES N-Channel Enhancement-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN TO-237 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL VN1710L VN1710M Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C T A = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VOS VGS 10 10M Po Tjo T 5 tg TL 170 170 ±30 0.17 ±30 0.19 0.11 0.
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