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ND2020E - N-Channel Depletion-Mode MOS Transistors

Download the ND2020E datasheet PDF. This datasheet also covers the ND2020L variant, as both devices belong to the same n-channel depletion-mode mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (ND2020L-Siliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ND2020E
Manufacturer Siliconix
File Size 98.76 KB
Description N-Channel Depletion-Mode MOS Transistors
Datasheet download datasheet ND2020E Datasheet

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Other Datasheets by Siliconix

Part Number Description
ND2020L N-Channel Depletion-Mode MOS Transistors
ND2012E N-Channel Depletion-Mode MOS Transistors
ND2012L N-Channel Depletion-Mode MOS Transistors
ND2406B N-Channel Depletion-Mode MOS Transistors
ND2406L N-Channel Depletion-Mode MOS Transistors

Full PDF Text Transcription

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ND2020 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (il) (A) PACKAGE ND2020L 200 20 0.132 TO-92 ND2020E 200 20 0.18 TO-206AC a'Y"Siliconix ~ incorporated TO-92 BOTTOM VIEW ~§ 1 SOURCE 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE = ABSOLUTE MAXIMUM RATINGS (TA 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL ND2020L ND2020E 2 Drain-Source Voltage Vos 200 200 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA = 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS 10 10M Po TJ. Tstg h ±30 0.132 0.
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