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ND2012L - N-Channel Depletion-Mode MOS Transistors

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Part number ND2012L
Manufacturer Siliconix
File Size 96.56 KB
Description N-Channel Depletion-Mode MOS Transistors
Datasheet download datasheet ND2012L Datasheet

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ND2012 SERIES N-Channel Depletion-Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSV rOS(ON) 10 NUMBER (V) (n.) (A) PACKAGE ND2012L 200 12 0.16 TO-92 ND2012E 200 12 0.22 TO-206AC tcrSiliconix ~ incorporatE!d TO-92 BOTTOM VIEW ~r::::::4 ~ ~ 1 SOURCE . 2 GATE 3 DRAIN TO-206AC (TO-52) BOTTOM VIEW Performance Curves: VDDQ20 (See Section 7) 1 SOURCE 2 GATE 3 DRAIN & CASE ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETERS/TEST CONDITIONS SYMBOL ND2012L ND2012E 2 Drain-Source Voltage Vos 200 200 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TA= 25°C TA = 100°C Power Dissipation TA= 25°C TA= 100°C Operating Junction and Storage Temperature Lead Temperature (1/16" from case for 10 seconds) VGS 10 10M Po Tj.
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