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SSM9928GEO - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Download the SSM9928GEO datasheet PDF. This datasheet also covers the SSM9928EO variant, as both devices belong to the same dual n-channel enhancement-mode power mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

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Note: The manufacturer provides a single datasheet file (SSM9928EO-SiliconStandard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSM9928GEO
Manufacturer Silicon Standard
File Size 253.60 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Datasheet download datasheet SSM9928GEO Datasheet

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Other Datasheets by Silicon Standard

Part Number Description
SSM9928EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
SSM9928O N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Full PDF Text Transcription

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SSM9928(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications Description G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 23mΩ 5A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO. Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 5 3.
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