Datasheet4U Logo Datasheet4U.com

SSM9928EO - DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS

Description

Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

📥 Download Datasheet

Datasheet Details

Part number SSM9928EO
Manufacturer Silicon Standard
File Size 253.60 KB
Description DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Datasheet download datasheet SSM9928EO Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SSM9928(G)EO DUAL N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.5V gate drive Ideal for DC/DC battery applications Description G2 S2 S2 D2 TSSOP-8 Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 S1 S1 D1 BV DSS RDS(ON) ID 20V 23mΩ 5A D1 D2 G1 G2 S1 S2 This device is available with Pb-free lead finish (second-level interconnect) as SSM9928GEO. Absolute Maximum Ratings Symbol Parameter Rating Units VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Drain Current3, VGS @ 4.5V Drain Current3, VGS @ 4.5V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor 20 ±12 5 3.
Published: |