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SSM630GP - N-channel Enhancement-mode Power MOSFET

Description

The SSM630GP achieves fast switching performance with low gate charge without a complex drive circuit.

It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits.

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Datasheet Details

Part number SSM630GP
Manufacturer Silicon Standard
File Size 643.66 KB
Description N-channel Enhancement-mode Power MOSFET
Datasheet download datasheet SSM630GP Datasheet

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Full PDF Text Transcription

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SSM630GP N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS R DS(ON) ID DESCRIPTION The SSM630GP achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. 200V 400mΩ 9A Pb-free; RoHS-compliant TO-220 The SSM630GP is in TO-220 for through-hole mounting where a small footprint is required on the board, and/or an external heatsink is to be attached. G D S These devices are manufactured with an advanced process, providing improved on-resistance and switching performance.
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