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SGTP75V65FDB1P7 - 650V FIELD STOP IGBT

Download the SGTP75V65FDB1P7 datasheet PDF. This datasheet also covers the SGTP75V65FDB1P7-SilanSemiconductors variant, as both devices belong to the same 650v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology,

Key Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGTP75V65FDB1P7-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGTP75V65FDB1P7
Manufacturer Silan Semiconductors
File Size 453.82 KB
Description 650V FIELD STOP IGBT
Datasheet download datasheet SGTP75V65FDB1P7 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGTP75V65FDB1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 650V, VCE(sat)(typ.)=1.65V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C C 2 1 G 3 E 123 TO-247-3L NOMENCLATURE SGT P 75 V 65 F D B 1 P7 IGBT series Technical grade Current, 75: 75A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 5+ Y : Field Stop 5++ A : Field Stop 6 Voltage, 65: 650V 120: 1200V Package P7 : TO-247-3L 1,2,3 : Version No.