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SGTP75V120FDB2PW4 - 1200V FIELD STOP IGBT

Download the SGTP75V120FDB2PW4 datasheet PDF. This datasheet also covers the SGTP75V120FDB2PW4-SilanSemiconductors variant, as both devices belong to the same 1200v field stop igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field Stop V technology,

Key Features

  • low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SGTP75V120FDB2PW4-SilanSemiconductors_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SGTP75V120FDB2PW4
Manufacturer Silan Semiconductors
File Size 526.20 KB
Description 1200V FIELD STOP IGBT
Datasheet download datasheet SGTP75V120FDB2PW4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SGTP75V120FDB2PW4_Datasheet 75A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field Stop V technology, features low conduction loss and switching loss. This device is applicable to photovoltaic, UPS, SMPS, and PFC fields. FEATURES  75A, 1200V, VCE(sat)(typ.)=1.9V@IC=75A  Low conduction loss  Ultra-fast switching  High input impedance  TJmax.=175C C 1 4 G 3 2 E 12 3 4 TO-247P-4L NOMENCLATURE IGBT series Industrial grade Current, 75: 75A SGT P 75 V 120 F D B 2 PW4 N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V, 120: 1200V Package PW4: TO-247P-4L 1,2,3 : Version No.