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SVT043R0NT - N-CHANNEL MOSFET

Datasheet Summary

Description

technology.

Features

  • 180A, 40V, RDS(on)(typ. )=2.6m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27.

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Datasheet Details

Part number SVT043R0NT
Manufacturer Silan Microelectronics
File Size 271.16 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT043R0NT Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVT043R0NT/L5_Datasheet 180A, 40V N-CHANNEL MOSFET DESCRIPTION 2 S1 8D SVT043R0NT/L5 is an N-channel enhancement mode power MOS S2 7D field effect transistor which is produced using Silan's LVMOS 1 S3 6D technology. The improved process and cell structure have been G4 5D especially tailored to minimize on-state resistance, provide superior 3 switching performance. 1.Gate 2.Drain 3.Source These devices are widely used in UPS, Power Management for Inverter Systems. FEATURES  180A, 40V, RDS(on)(typ.)=2.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability TO-220-3L 5 678 8765 43 21 1 234 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVT043R0NT SVT043R0NL5TR Package TO-220-3L PDFN-8-5X6X0.95-1.
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