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SVT041R7NT - N-CHANNEL MOSFET

Datasheet Summary

Description

SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 195A, 40V, RDS(on)(typ. )=1.4m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 1 2 3 TO-220-3L KEY.

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Datasheet Details

Part number SVT041R7NT
Manufacturer Silan Microelectronics
File Size 305.77 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet SVT041R7NT Datasheet
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Full PDF Text Transcription

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Silan Microelectronics SVG041R7NT_Datasheet 195A, 40V N-CHANNEL MOSFET DESCRIPTION SVT041R7NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  195A, 40V, RDS(on)(typ.)=1.4m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 1 2 3 TO-220-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 40 2.0~4.0 1.
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