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SVS4N65D - TRANSISTOR

Download the SVS4N65D datasheet PDF (SVS4N65F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for transistor.

Description

SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Extreme dv/dt rated.
  • High peak current capability 123 TO-220F-3L 123 TO-251J-3L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS4N65F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS4N65D
Manufacturer Silan Microelectronics
File Size 357.35 KB
Description TRANSISTOR
Datasheet download datasheet SVS4N65D Datasheet

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Full PDF Text Transcription

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Silan Microelectronics SVS4N65F/MJ/D_Datasheet 4A, 650V DP MOS POWER TRANSISTOR GENERAL DESCRIPTION SVS4N65F/MJ/D is an N-channel enhancement mode high voltage power MOSFETs produced using the new platform of Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. 2 1 3 1.Gate 2.Drain 3.Source 1 3 TO-252-2L FEATURES  4A, 650V, RDS(on)(typ)=0.95Ω@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Extreme dv/dt rated  High peak current capability 123 TO-220F-3L 123 TO-251J-3L ORDERING INFORMATION Part No.
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