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SVS12N80FJH - 800V DP MOS POWER TRANSISTOR

Download the SVS12N80FJH datasheet PDF. This datasheet also covers the SVS12N80F variant, as both devices belong to the same 800v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 12A,800V, RDS(on)(typ. )=0.37@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.Source TO-220FJ-3L 12 3 12 3 TO-220FJH-3L TO-3P 12 3 TO-220F-3L 1 3 TO-263-2L.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVS12N80F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVS12N80FJH
Manufacturer Silan Microelectronics
File Size 366.92 KB
Description 800V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVS12N80FJH Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVS12N80FJ 800V DP MOS POWER TRANSISTOR
SVS12N80F 800V DP MOS POWER TRANSISTOR
SVS12N80PN 800V DP MOS POWER TRANSISTOR
SVS12N80S 800V DP MOS POWER TRANSISTOR
SVS11N60FD2 600V DP MOS POWER TRANSISTOR

Full PDF Text Transcription

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Silan Microelectronics SVS12N80F/FJ/S/FJH/PN_Datasheet 12A, 800V DP MOS POWER TRANSISTOR DESCRIPTION SVS12N80F/FJ/S/FJH/PN is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  12A,800V, RDS(on)(typ.)=0.37@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability 2 1 12 3 3 1.Gate 2.Drain 3.
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