Datasheet4U Logo Datasheet4U.com

SVG105R5NT - 98V N-CHANNEL MOSFET

General Description

SVG105R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A, 98V, RDS(on)(typ. )=4.6m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220-3L.

📥 Download Datasheet

Datasheet Details

Part number SVG105R5NT
Manufacturer Silan Microelectronics
File Size 266.55 KB
Description 98V N-CHANNEL MOSFET
Datasheet download datasheet SVG105R5NT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG105R5NT_Datasheet 120A, 98V N-CHANNEL MOSFET DESCRIPTION SVG105R5NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  120A, 98V, RDS(on)(typ.)=4.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220-3L ORDERING INFORMATION Part No. SVG105R5NT Package TO-220-3L Marking 105R5NT Hazardous Substance Control Pb free Packing Type Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.