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SVG105R4NKL - 100V N-CHANNEL MOSFET

Download the SVG105R4NKL datasheet PDF. This datasheet also covers the SVG105R4NT variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVG105R4NT(S)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 120A, 100V, RDS(on)(typ. )= 5.0m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262L-3L 1 3 TO-263-2L 1 2 3 TO-220-3L KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVG105R4NT-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVG105R4NKL
Manufacturer Silan Microelectronics
File Size 345.35 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVG105R4NKL Datasheet

Other Datasheets by Silan Microelectronics

Part Number Description
SVG105R4NS 100V N-CHANNEL MOSFET
SVG105R4NT 100V N-CHANNEL MOSFET
SVG105R5NT 98V N-CHANNEL MOSFET
SVG10120NAD 100V N-CHANNEL MOSFET
SVG10120NAT 100V N-CHANNEL MOSFET
SVG10120NSA 100V N-CHANNEL MOSFET
SVG104R5NF 100V N-CHANNEL MOSFET
SVG104R5NKL 100V N-CHANNEL MOSFET
SVG104R5NS 100V N-CHANNEL MOSFET
SVG104R5NS6 100V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVG105R4NT(S)(KL)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVG105R4NT(S)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  120A, 100V, RDS(on)(typ.)= 5.0m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262L-3L 1 3 TO-263-2L 1 2 3 TO-220-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.