SVG062R0NT - 60V N-CHANNEL MOSFET

Silan Microelectronics

General Description

effect transistor which is produced using Silan's LVMOS technology.

Key Features

240A, 60V, RDS(on)(typ. )=1.6m@VGS=10V.
Low gate charge T.
Low Crss.
Fast switching N.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating E.
RoHS compliant KEY.

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SVG062R0NT 60v n-channel mosfet by Silan Microelectronics - Datasheet Preview

Datasheet Details

Part number	SVG062R0NT
Manufacturer	Silan Microelectronics
File Size	325.83 KB
Description	60V N-CHANNEL MOSFET
Datasheet	SVG062R0NT Datasheet

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Full PDF Text Transcription (Reference)

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Silan Microelectronics SVG062R0NT_Datasheet 240A, 60V N-CHANNEL MOSFET DESCRIPTION 2 SVG062R0NT is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance and high avalanche breakdown tolerance. L This device is widely used in power management for UPS and Inverter Systems. IA FEATURES  240A, 60V, RDS(on)(typ.)=1.6m@VGS=10V  Low gate charge T  Low Crss  Fast switching N  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating E  RoHS compliant KEY PERFORMANCE PARAMETERS ID Characteristics VDS VGS(th) F RDS(on),max ID Qg.typ Ratings 60 2.5~3.5 2.